First principles predictions of magneto-optical data for semiconductor point defect identification: The case of divacancy defects in 4H-SiC

@article{Davidsson2018FirstPP,
  title={First principles predictions of magneto-optical data for semiconductor point defect identification: The case of divacancy defects in 4H-SiC},
  author={J. Davidsson and V. Iv'ady and R. Armiento and N. T. Son and {\'A}. Gali and I. Abrikosov},
  journal={New Journal of Physics},
  year={2018},
  volume={20},
  pages={023035}
}
Study and design of magneto-optically active single point defects in semiconductors are rapidly growing fields due to their potential in quantum bit (qubit) and single photon emitter applications. ... 
First-principles calculations of Stark shifts of electronic transitions for defects in semiconductors: the Si vacancy in 4H-SiC.
Ab initio theory of the nitrogen-vacancy center in diamond
Stabilization of point-defect spin qubits by quantum wells
...
1
2
...

References

SHOWING 1-10 OF 65 REFERENCES
A room temperature single photon source in silicon carbide
Indistinguishable photons from separated silicon-vacancy centers in diamond.
...
1
2
3
4
5
...