First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach

@article{Gu2011FirstED,
  title={First experimental demonstration of gate-all-around III–V MOSFETs by top-down approach},
  author={J. Gu and Y. Liu and Y. Q. Wu and R. Colby and R. G. Gordon and P. Ye},
  journal={2011 International Electron Devices Meeting},
  year={2011},
  pages={33.2.1-33.2.4}
}
  • J. Gu, Y. Liu, +3 authors P. Ye
  • Published 2011
  • Physics
  • 2011 International Electron Devices Meeting
  • The first inversion-mode gate-all-around (GAA) III–V MOSFETs are experimentally demonstrated with a high mobility In<inf>0.53</inf>Ga<inf>0.47</inf>As channel and atomic-layer-deposited (ALD) Al<inf>2</inf>O<inf>3</inf>/WN gate stacks by a top-down approach. A well-controlled InGaAs nanowire release process and a novel ALD high-k/metal gate process has been developed to enable the fabrication of III–V GAA MOSFETs. Well-behaved on-state and off-state performance has been achieved with channel… CONTINUE READING
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