First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming

@article{Compagnoni2007FirstEF,
  title={First evidence for injection statistics accuracy limitations in NAND Flash constant-current Fowler-Nordheim programming},
  author={C. Monzio Compagnoni and A. S. Spinelli and Riccardo Gusmeroli and A. L. Lacaita and S. Beltrami and A. Ghetti and andrea. visconti},
  journal={2007 IEEE International Electron Devices Meeting},
  year={2007},
  pages={165-168}
}
We present for the first time the direct evidence of an injection statistical spread in the number of electrons placed into the floating-gate of deeply-scaled NAND Flash memories during constant-current Fowler-Nordheim programming. The spread directly affects the precision of the programmed levels and sets the ultimate accuracy of the NAND programming algorithm. Experimental results on technology nodes ranging from 90 nm to 60 nm reveal that the injection statistical spread increases as cell… CONTINUE READING
Highly Cited
This paper has 66 citations. REVIEW CITATIONS

From This Paper

Figures, tables, and topics from this paper.

Citations

Publications citing this paper.
Showing 1-10 of 42 extracted citations

Novel model for cell - system interaction (MCSI) in NAND Flash

2008 IEEE International Electron Devices Meeting • 2008
View 4 Excerpts
Highly Influenced

Error Characterization and ECC Usage Relaxation beyond 20nm Floating Gate NAND Flash Memory

2018 IEEE International Memory Workshop (IMW) • 2018
View 1 Excerpt

2D vs 3D NAND technology: Reliability benchmark

2017 IEEE International Integrated Reliability Workshop (IIRW) • 2017
View 1 Excerpt

66 Citations

051015'10'13'16'19
Citations per Year
Semantic Scholar estimates that this publication has 66 citations based on the available data.

See our FAQ for additional information.

References

Publications referenced by this paper.
Showing 1-3 of 3 references

483neo from STMicroelectronics for their help in setting up

P. Cappelletti, B. Camerlenghi, B. Eitan
This work has MOS devices," IEEE Trans. Electron Devices • 2006

Non-volatile memory technologies for beyond 2010

Digest of Technical Papers. 2005 Symposium on VLSI Circuits, 2005. • 2005

floatingNAND cells constant-current FN programming. The injection gate memory reliability,

G J.
IEDM Tech. Dig., pp. 877-880, • 2004

Similar Papers

Loading similar papers…