First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications

@article{Hashemi2014FirstDO,
  title={First demonstration of high-Ge-content strained-Si1−xGex (x=0.5) on insulator PMOS FinFETs with high hole mobility and aggressively scaled fin dimensions and gate lengths for high-performance applications},
  author={Pouya Hashemi and Karthik Balakrishnan and Sebastian Engelmann and J. A. Ott and Ali Khakifirooz and Ashish Baraskar and M. Hopstaken and Joseph S. Newbury and Kevin Ka Ming Chan and E. Leobandung and R. T. Mo and Dae-gyu Park},
  journal={2014 IEEE International Electron Devices Meeting},
  year={2014},
  pages={16.1.1-16.1.4}
}
For the first time, we report fabrication and characterization of high-performance s-Si<sub>1-x</sub>Ge<sub>x</sub>-OI (x~0.5) pMOS FinFETs with aggressively scaled dimensions. We demonstrate realization of s-SiGe fins with W<sub>FIN</sub> =3.3nm and devices with L<sub>G</sub>=16nm, in a CMOS compatible process. Using a Si-cap-free passivation, we report SS=68mV/dec and μ<sub>eff</sub>=390±12 cm<sup>2</sup>/Vs at N<sub>inv</sub>=10<sup>13</sup>cm<sup>-2</sup>, outperforming the state-of-the-art… CONTINUE READING
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