First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit

@article{Ahn2017FirstPrinciplesBasedQT,
  title={First-Principles-Based Quantum Transport Simulations of Monolayer Indium Selenide FETs in the Ballistic Limit},
  author={Yongsoo Ahn and Mincheol Shin},
  journal={IEEE Transactions on Electron Devices},
  year={2017},
  volume={64},
  pages={2129-2134}
}
We investigate the ballistic performance of monolayer indium selenide (InSe) n-type FETs, benchmarking with monolayer WS2, WSe2, and black phosphorus FETs. We utilize first-principles-based quantum transport simulations employing density functional theory and nonequilibrium Green’s function. The transfer characteristics, subthreshold swing, and drain-induced barrier lowering of InSe FETs are assessed and compared with those of the benchmarks. Our comparison of InSe FETs to the benchmark… CONTINUE READING

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