FinFET technology development guidelines for higher performance, lower power, and stronger resilience to parameter variations

@article{Tawfik2009FinFETTD,
  title={FinFET technology development guidelines for higher performance, lower power, and stronger resilience to parameter variations},
  author={Sherif A. Tawfik and Volkan Kursun},
  journal={2009 52nd IEEE International Midwest Symposium on Circuits and Systems},
  year={2009},
  pages={431-434}
}
The impact of the fin thickness and the gate oxide thickness on the electrical characteristics of FinFETs is studied in this paper. FinFET technology development guidelines for enhancing the on-current, suppressing the leakage currents, and weakening the sensitivity to parameter variations are provided. A sub-threshold slope lower than 100mV is achieved with a fin thinner than half of the gate length in a 32nm FinFET technology. The maximum on-current to leakage current ratio is achieved when… CONTINUE READING
Highly Cited
This paper has 18 citations. REVIEW CITATIONS
11 Citations
7 References
Similar Papers

Citations

Publications citing this paper.
Showing 1-10 of 11 extracted citations

References

Publications referenced by this paper.
Showing 1-7 of 7 references

Impact of Metal Gate Work Function on Gate Leakage of MOSFETs

  • Y. T. Hou, M. F. Li, T. Low, D. L. Kwong
  • Proceedings of the IEEE International Symposium…
  • 2003
1 Excerpt

Similar Papers

Loading similar papers…