FinFET SONOS flash memory for embedded applications

@article{Xuan2003FinFETSF,
  title={FinFET SONOS flash memory for embedded applications},
  author={Peiqi Xuan and Min She and Bruce D. Harteneck and Andrew Liddle and Jeffrey Bokor and T B King},
  journal={IEEE International Electron Devices Meeting 2003},
  year={2003},
  pages={26.4.1-26.4.4}
}
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared. 
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Design and scaling of a SONOS multidielectric device for nonvolatile memory applications

  • M. H. White
  • IEEE . Transactions on Components . Packaging…

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