FinFET SONOS flash memory for embedded applications

  title={FinFET SONOS flash memory for embedded applications},
  author={Peiqi Xuan and Min She and Bruce D. Harteneck and Andrew Liddle and Jeffrey Bokor and T B King},
  journal={IEEE International Electron Devices Meeting 2003},
FD-SOI (fully depleted silicon-on-insulator) FinFET SONOS flash memory devices are investigated for the first time, and they are found to be scalable to a gate length of 40 nm. Although the FinFET SONOS device does not have a body contact, excellent program/erase characteristics are achieved, together with high endurance, long retention time and low reading disturbance. Devices fabricated on [100] and [110] silicon surfaces are compared. 
Highly Cited
This paper has 81 citations. REVIEW CITATIONS
42 Citations
3 References
Similar Papers


Publications citing this paper.
Showing 1-10 of 42 extracted citations

82 Citations

Citations per Year
Semantic Scholar estimates that this publication has 82 citations based on the available data.

See our FAQ for additional information.


Publications referenced by this paper.
Showing 1-3 of 3 references

Design and scaling of a SONOS multidielectric device for nonvolatile memory applications

  • M. H. White
  • IEEE . Transactions on Components . Packaging…

Similar Papers

Loading similar papers…