FinFET — A Self-Aligned Double-Gate MOSFET Scalable to 20 nm

@inproceedings{Hisamoto2000FinFETA,
  title={FinFET — A Self-Aligned Double-Gate MOSFET Scalable to 20 nm},
  author={Digh Hisamoto and W. Lee and Jakub Kedzierski and Hideki Takeuchi and Kazuya Asano and Charles Kuo and Erik I. Anderson and Tsu-Jae King and Jeffrey Bokor and Chenming Calvin Hu},
  year={2000}
}
MOSFETs with gate length down to 17 nm are reported. To suppress the short channel effect, a novel self-aligned double-gate MOSFET, FinFET, is proposed. By using boron-doped Si0 4Ge0 6 as a gate material, the desired threshold voltage was achieved for the ultrathin body device. The quasiplanar nature of this new variant of the vertical double-gate MOSFETs can be fabricated relatively easily using the conventional planar MOSFET process technologies. 
Highly Influential
This paper has highly influenced 35 other papers. REVIEW HIGHLY INFLUENTIAL CITATIONS
Highly Cited
This paper has 766 citations. REVIEW CITATIONS

14 Figures & Tables

Topics

Statistics

050'02'04'06'08'10'12'14'16'18
Citations per Year

766 Citations

Semantic Scholar estimates that this publication has 766 citations based on the available data.

See our FAQ for additional information.