Fin-height controlled PVD-TiN gate finFET SRAM for enhancing noise margin

Abstract

PVD-TiN gate FinFET SRAM half-cells with different β-ratios and fin-height controlled transistors have successfully been fabricated using orientation-dependent wet etching and selective recess RIE. It was found that read static noise margin (SNM) increases significantly by controlling β from 1 to 2. With further increasing β, read SNM increases slightly. On… (More)

Topics

11 Figures and Tables