Fin Fet Fin Fet Example Created Directly Using Device 3d Syntax, Showing Doping Electron Distribution and Iv Characteristics Using Both Drift- Diffusion and Bohm Quantum Potential 3d Models

@inproceedings{FinFF,
  title={Fin Fet Fin Fet Example Created Directly Using Device 3d Syntax, Showing Doping Electron Distribution and Iv Characteristics Using Both Drift- Diffusion and Bohm Quantum Potential 3d Models},
  author={}
}
    3D is a physics based 3D device simulator for any device type and includes material properties for the commonly used semiconductor materials in use today. The physical phenomenon that can be simulated self consistently with the semiconductor equations CMOS and power devices. Device 3D uses a simple, intuitive and flexible syntax and runtime environment together with excellent 2D and 3D visualization tools compliment this powerful product. Fin FETs, nano wire FETs and standard FETs at aggressive… CONTINUE READING