Field emission and strain engineering of electronic properties in boron nitride nanotubes.

Abstract

The electrical properties of boron nitride (BN) nanostructures, particularly BN nanotubes (NTs), have been studied less in comparison to the counterpart carbon nanotubes. The present work investigates the field emission (FE) behavior of BNNTs under multiple cycles of FE experiments and demonstrates a strain-engineering pathway to tune the electronic… (More)
DOI: 10.1088/0957-4484/23/10/105702

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Cite this paper

@article{Ghassemi2012FieldEA, title={Field emission and strain engineering of electronic properties in boron nitride nanotubes.}, author={Hessam Mir Shah Ghassemi and Chee Hui Lee and Yoke Khin Yap and Reza Shahbazian Yassar}, journal={Nanotechnology}, year={2012}, volume={23 10}, pages={105702} }