Field-effect transistors on rubrene single crystals with parylene gate insulator
@article{Podzorov2002FieldeffectTO,
title={Field-effect transistors on rubrene single crystals with parylene gate insulator},
author={Vitaly Podzorov and V. M. Pudalov and Michael E. Gershenson},
journal={Applied Physics Letters},
year={2002},
volume={82},
pages={1739-1741}
}We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1–1 cm2/V s and the on/off ratio⩾104. The temperature dependence of the mobility is discussed.
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