Field-effect transistors on rubrene single crystals with parylene gate insulator

@article{Podzorov2002FieldeffectTO,
  title={Field-effect transistors on rubrene single crystals with parylene gate insulator},
  author={Vitaly Podzorov and V. M. Pudalov and Michael E. Gershenson},
  journal={Applied Physics Letters},
  year={2002},
  volume={82},
  pages={1739-1741}
}
We report on the fabrication and characterization of the organic field-effect transistors (OFETs) on the surface of single crystals of rubrene. The parylene polymer film has been used as the gate insulator. At room temperature, these OFETs exhibit the p-type conductivity with the field-effect mobility 0.1–1 cm2/V s and the on/off ratio⩾104. The temperature dependence of the mobility is discussed. 

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Polymeric gated organic field effect transistor using magnesium phthalocyanine

  • R. RMenon C. S.
  • Physics
    Optics & Photonics - Photonic Devices + Applications
  • 2014
ABSTRACT An organic thin film transistor has been fabricated using evaporated Magnesium Phthalocyanine as active layer. Parylene film prepared by chemical vapour deposition has been used as the