Field-Related Failure of GaN-on-Si HEMTs: Dependence on Device Geometry and Passivation

This paper reports on an extensive analysis of the breakdown of GaN-based Schottky-gated HEMTs submitted to high-voltage stress. The analysis was carried out on transistors with different lengths of the drain-side gatehead (LGH), corresponding to different levels of electric field across the SiN passivation. Based on dc measurements, 2-D simulations, and… (More)