Few electron limit of n-type metal oxide semiconductor single electron transistors.
@article{Prati2012FewEL, title={Few electron limit of n-type metal oxide semiconductor single electron transistors.}, author={Enrico Prati and M De Michielis and M. Belli and Simone Cocco and Marco Fanciulli and D. Kotekar-Patil and M. Ruoff and Dieter P. Kern and D. A. Wharam and J. Verduijn and Giuseppe Carlo Tettamanzi and Sven M. J. Rogge and B. Roche and Romain Wacquez and Xavier Jehl and Maud Vinet and Marc Sanquer}, journal={Nanotechnology}, year={2012}, volume={23 21}, pages={ 215204 } }
We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb…
44 Citations
Sequential reduction of the silicon single-electron transistor structure to atomic scale.
- PhysicsNanotechnology
- 2017
An original CMOS compatible fabrication method of a single-electron transistor structure with extremely small islands, formed by solitary phosphorus dopants in the silicon nanobridge, which allows it to be modified further by various impurities in additional etching and implantation cycles.
Tunable single hole regime of a silicon field effect transistor in standard CMOS technology
- Physics
- 2016
The electrical properties of a Single Hole Field Effect Transistor (SH-FET) based on CMOS technology are analyzed in a cryogenic environment. Few electron–hole Coulomb diamonds are observed using…
Single-electron tunneling through an individual arsenic dopant in silicon.
- PhysicsNanoscale
- 2017
The single-electron tunneling behaviour of a silicon nanobridge where the effective island is a single As dopant atom marks a further step towards the implementation of single-atom electronics.
Single electron and single dopant control in silicon transistors
- Physics
- 2013
Recent progress in Silicon-On-Insulator transistors fabrication have concerned a dimensions reduction, up to a few tens of nanometers, and an improvement of the leads. This allows to study the few…
Single-Electron Structures Based on Solitary Dopant Atoms of Arsenic, Phosphorus, Gold, and Potassium in Silicon
- Materials ScienceMoscow University Physics Bulletin
- 2019
Here we present CMOS compatible fabrication methods and the results of an experimental study of single-atom single-electron transistors made from silicon on insulator and based on various dopant…
A silicon nanocrystal tunnel field effect transistor
- Physics
- 2014
In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The…
Ambipolar quantum dots in undoped silicon fin field-effect transistors
- PhysicsApplied Physics Letters
- 2018
We integrate ambipolar quantum dots in silicon fin field-effect transistors using exclusively standard complementary metal-oxide-semiconductor fabrication techniques. We realize ambipolarity by…
Strongly Correlated Charge Transport in Silicon Metal-Oxide-Semiconductor Field-Effect Transistor Quantum Dots.
- PhysicsPhysical review letters
- 2018
Large current fluctuations in the inelastic cotunneling regime are reported on, corresponding to different highly correlated, non-Markovian charge transfer processes and their statistics with the internal state of the quantum dot.
Single donor electronics and quantum functionalities with advanced CMOS technology.
- PhysicsJournal of physics. Condensed matter : an Institute of Physics journal
- 2016
This experimental review focuses on the silicon-on-insulator devices produced within microelectronics facilities with only very minor modifications to the current industrial CMOS process and tools, and emphasizes the central role of electrostatics in etched silicon nanowire transistors, which allows to understand the characteristics in the full range from zero to room temperature.
Single-hole tunneling through a two-dimensional hole gas in intrinsic silicon
- Physics
- 2013
In this letter we report single-hole tunneling through a quantum dot in a two-dimensional hole gas, situated in a narrow-channel field-effect transistor in intrinsic silicon. Two layers of aluminum…
References
SHOWING 1-10 OF 25 REFERENCES
Simple and controlled single electron transistor based on doping modulation in silicon nanowires
- Physics
- 2006
A simple and highly reproducible single electron transistor (SET) has been fabricated using gated silicon nanowires. The structure is a metal-oxide-semiconductor field-effect transistor made on…
Single-donor ionization energies in a nanoscale CMOS channel.
- EngineeringNature nanotechnology
- 2010
It is shown that a single arsenic dopant atom dramatically affects the off-state room-temperature behaviour of a short-channel field-effect transistor fabricated with standard microelectronics processes, and suggests a path to incorporating quantum functionalities into silicon CMOS devices through manipulation of single donor orbitals.
Patterning Strategy for Monoelectronic Device Platform in a Complementary Metal Oxide Semiconductor Technology
- Engineering
- 2011
We report a patterning strategy for building the first monoelectronic device complementary metal oxide semiconductor (CMOS)-compatible platform, including a single-electron transistor (SET) and…
On the Origin of Negative Differential Conductance in Ultranarrow-Wire-Channel Silicon Single-Electron and Single-Hole Transistors
- Physics
- 2008
The origin of negative differential conductance (NDC) is investigated in both a silicon single-electron transistor (SET) and single-hole transistor (SHT) with a common ultranarrow wire channel,…
Si-based ultrasmall multiswitching single-electron transistor operating at room-temperature
- Physics
- 2010
An ultrasmall single-electron transistor has been made by scaling the size of a fin field-effect transistor structure down to an ultimate limiting form, resulting in the reliable formation of a sub-5…
A tunable, dual mode field-effect or single electron transistor
- Physics
- 2012
A dual mode device behaving either as a field-effect transistor or a single electron transistor (SET) has been fabricated using silicon-on-insulator metal oxide semiconductor technology. Depending on…
Three-dimensional simulation of realistic single electron transistors
- PhysicsIEEE Transactions on Nanotechnology
- 2005
We present an approach, and its implementation in a computer program, for the three-dimensional (3-D) simulation of realistic single electron transistor (SET) structures, in which subregions with…
Switching quantum transport in a three donors silicon fin-field effect transistor
- Physics
- 2011
We switch the transport along different paths in a system constituted by a phosphorus donor in a silicon quantum dot in complementary metal-oxide-semiconductor technology, coupled with two donors at…
Three-Dimensional Simulation of One-Dimensional Transport in Silicon Nanowire Transistors
- PhysicsIEEE Transactions on Nanotechnology
- 2007
We present a simulation study of silicon nanowire transistors, based on an in-house code providing the self-consistent solution of Poisson, Schrodinger, and continuity equations on a generic…
Parallel spin filling and energy spectroscopy in few-electron Si metal-on-semiconductor-based quantum dots
- Physics
- 2010
We report the spin filling pattern in the few electron limit of silicon metal-on-semiconductor based quantum dots (QDs). Magnetic field dependence of Coulomb oscillation peaks showed filling of…