Few electron limit of n-type metal oxide semiconductor single electron transistors.

@article{Prati2012FewEL,
  title={Few electron limit of n-type metal oxide semiconductor single electron transistors.},
  author={E. Prati and M. De Michielis and M. Belli and S. Cocco and M. Fanciulli and D. Kotekar-Patil and M. Ruoff and D. Kern and D. Wharam and J. Verduijn and G. Tettamanzi and S. Rogge and B. Roche and R. Wacquez and X. Jehl and M. Vinet and M. Sanquer},
  journal={Nanotechnology},
  year={2012},
  volume={23 21},
  pages={
          215204
        }
}
We report the electronic transport on n-type silicon single electron transistors (SETs) fabricated in complementary metal oxide semiconductor (CMOS) technology. The n-type metal oxide silicon SETs (n-MOSSETs) are built within a pre-industrial fully depleted silicon on insulator (FDSOI) technology with a silicon thickness down to 10 nm on 200 mm wafers. The nominal channel size of 20 × 20 nm(2) is obtained by employing electron beam lithography for active and gate level patterning. The Coulomb… Expand
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