Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges

@article{Avrutin2010FerromagnetismIZ,
  title={Ferromagnetism in ZnO- and GaN-Based Diluted Magnetic Semiconductors: Achievements and Challenges},
  author={Vitaliy Avrutin and Natalia Izyumskaya and {\"U}mit {\"O}zg{\"u}r and Donald J. Silversmith and Hadis Morkoç},
  journal={Proceedings of the IEEE},
  year={2010},
  volume={98},
  pages={1288-1301}
}
Both GaN- and ZnO-based diluted semiconductors (DMSs) have recently attracted considerable interest fueled by theoretical predictions of ferromagnetic ordering in these materials above room temperature, making them especially attractive for spintronics. The intense experimental research that followed has revealed, however, a great deal of controversy. The local structure and magnetic behavior of GaN- and ZnO-based DMSs were found to depend strongly on a preparation technique and growth… CONTINUE READING

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