# Ferromagnetism in Mn-doped GaAs due to substitutional-interstitial complexes

@article{Mahadevan2003FerromagnetismIM,
title={Ferromagnetism in Mn-doped GaAs due to substitutional-interstitial complexes},
journal={Physical Review B},
year={2003},
volume={68},
pages={075202}
}
• Published 8 August 2003
• Materials Science, Physics
• Physical Review B
While most calculations on the properties of the ferromagnetic semiconductor GaAs:Mn have focused on isolated Mn substituting the Ga site $({\mathrm{Mn}}_{\mathrm{Ga}}),$ we investigate here whether alternate lattice sites are favored and what the magnetic consequences of this might be. Under As-rich (Ga-poor) conditions prevalent at growth, we find that the formation energies are lower for ${\mathrm{Mn}}_{\mathrm{Ga}}$ over interstitial Mn $({\mathrm{Mn}}_{i}).$ As the Fermi energy is shifted… Expand

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