Ferroelectric Control of Spin Polarization

  title={Ferroelectric Control of Spin Polarization},
  author={Vincent Garcia and Manuel Bibes and Laura Bocher and Sergio Valencia and Florian Kronast and Arnaud Crassous and Xavier Moya and Sha{\"i}ma Enouz-V{\'e}drenne and Alexandre Gloter and Dominique Imhoff and Cyrile Deranlot and Neil D Mathur and Stephane Fusil and Karim Bouzehouane and Agn{\`e}s Barth{\'e}l{\'e}my},
  pages={1106 - 1110}
Spin into Control Spintronics—the use of the spin direction of subatomic particles to control on and off states, instead of electric charge—has the potential to create low-power electronics, because less energy is needed to flip spin states than to flip switches to create voltage barriers. Theoretical work hints that spin-polarized electrons from a ferromagnetic electrode can be controlled by a change in polarization created in a ferroelectric thin film. Garcia et al. (p. 1106, published online… 
Electric control of spin injection into a ferroelectric semiconductor.
Analytical model calculations demonstrate that this is a general effect for ferromagnetic-metal-ferroelectric-semiconductor systems and, furthermore, that ferroelectric modulation can even reverse the sign of spin polarization.
Loss of spin polarization in ferromagnet/ferroelectric tunnel junctions due to screening effects
Electric field control of magnetization allows further miniaturization of integrated circuits for binary bit processing and data storage as it eliminates the need for bulky sophisticated systems to
Ferroionic inversion of spin polarization in a spin-memristor
Magnetoelectric coupling in artificial multiferroic interfaces can be drastically affected by the switching of oxygen vacancies and by the inversion of the ferroelectric polarization. Disentangling
Active control of magnetoresistance of organic spin valves using ferroelectricity
A new knob is employed to tune the resistance of organic spin valves by adding a thin ferroelectric interfacial layer between the ferromagnetic electrode and the organic spacer, enabling active control of resistance using both electric and magnetic fields.
Full voltage manipulation of the resistance of a magnetic tunnel junction
A giant nonvolatile solely electrical switchable high/low resistance in magnetic tunnel junctions at room temperature without the aid of a magnetic field is accomplished.
Reversible electrical switching of spin polarization in multiferroic tunnel junctions.
It is shown that owing to the coupling between magnetization and ferro electric polarization at the interface between the electrode and barrier of a multiferroic tunnel junction, the spin polarization of the tunnelling electrons can be reversibly and remanently inverted by switching the ferroelectric polarization ofThe barrier.
Tuning the interfacial spin-orbit coupling with ferroelectricity
By introducing a ferroelectric (FE) material in a ferromagnetic/heavy metal stack the SHA can be voltage controled via the polarization of the FE layer, which suggests a route for designing future energy efficient spin-orbitronic devices using ferroElectric control.
\textbf{Active control of magnetoresistance of organic spin valves using ferroelectricity}
Organic spintronic devices have been appealing because of the long spin lifetime of the charge carriers in the organic materials and their low cost, flexibility and chemical diversity. In previous


Spintronics: Fundamentals and applications
Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems. This article reviews the current status of this subject,
Electric-field control of ferromagnetism
By applying electric fields, the ability to externally control the properties of magnetic materials would be highly desirable from fundamental and technological viewpoints is demonstrated, particularly in view of recent developments in magnetoelectronics and spintronics.
Large voltage-induced magnetic anisotropy change in a few atomic layers of iron.
Simulations confirm that voltage-controlled magnetization switching in magnetic tunnel junctions is possible using the anisotropy change demonstrated here, which could be of use in the development of low-power logic devices and non-volatile memory cells.
The emergence of spin electronics in data storage.
The authors are starting to see a new paradigm where magnetization dynamics and charge currents act on each other in nanostructured artificial materials, allowing faster, low-energy operations: spin electronics is on its way.
Magnetization vector manipulation by electric fields
It is shown that the manipulation of magnetization can be achieved solely by electric fields in a ferromagnetic semiconductor, (Ga,Mn)As, allowing manipulation of the magnetization direction.
Magnetic tunnel junctions with ferroelectric barriers: prediction of four resistance States from first principles.
It is found that the resistance of such a MFTJ is significantly changed when the electric polarization of the barrier is reversed and/or when the magnetizations of the electrodes are switched from parallel to antiparallel.
Non-volatile ferroelectric control of ferromagnetism in (Ga,Mn)As.
Non-volatile gating of (Ga,Mn)As has been made possible by applying a low-temperature copolymer deposition technique that is distinct from pre-existing technologies for ferroelectric gates on magnetic oxides, opening a way to nanometre-scale modulation of magnetic semiconductor properties with rewritable ferro electric domain patterns, operating at modest voltages and subnanosecond times.
Tunnel junctions with multiferroic barriers.
This work shows that films of La (0.1)Bi(0.9)MnO(3) (LBMO) are ferromagnetic and ferroelectric, and retain both ferroic properties down to a thickness of 2 nm, and represents an advance over the original four-state memory concept based on multiferroics.
Theoretical current-voltage characteristics of ferroelectric tunnel junctions
We present the concept of ferroelectric tunnel junctions (FTJs). These junctions consist of two metal electrodes separated by a nanometer-thick ferroelectric barrier. The current-voltage
Giant tunnel electroresistance for non-destructive readout of ferroelectric states
The approach exploits the otherwise undesirable leakage current—dominated by tunnelling at these very low thicknesses—to read the polarization state without destroying it, and demonstrates scalability down to 70 nm, corresponding to potential densities of >16 Gbit inch-2.