Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.

@article{Huang2017FatigueMO,
  title={Fatigue mechanism of yttrium-doped hafnium oxide ferroelectric thin films fabricated by pulsed laser deposition.},
  author={Fei Huang and Xing ongsheng Chen and Xiao Liang and Jun Qin and Yan Zhang and Taixing Huang and Zhuo Wang and Bo Peng and Peiheng Zhou and Haipeng Lu and Li Zhang and Longjiang Deng and Ming Liu and Qi Liu and He Tian and Lei Bi},
  journal={Physical chemistry chemical physics : PCCP},
  year={2017},
  volume={19 5},
  pages={
          3486-3497
        }
}
Owing to their prominent stability and CMOS compatibility, HfO2-based ferroelectric films have attracted great attention as promising candidates for ferroelectric random-access memory applications. A major reliability issue for HfO2 based ferroelectric devices is fatigue. So far, there have been a few studies on the fatigue mechanism of this material. Here, we report a systematic study of the fatigue mechanism of yttrium-doped hafnium oxide (HYO) ferroelectric thin films deposited by pulsed… CONTINUE READING
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