Fatigue Experiments on Single Crystal Silicon in an Oxygen-Free Environment

@article{Hong2015FatigueEO,
  title={Fatigue Experiments on Single Crystal Silicon in an Oxygen-Free Environment},
  author={Vu A. Hong and Shingo Yoneoka and Matthew W. Messana and Andrew B. Graham and James C. Salvia and Todd T. Branchflower and Eldwin J. Ng and Thomas W. Kenny},
  journal={Journal of Microelectromechanical Systems},
  year={2015},
  volume={24},
  pages={351-359}
}
The fatigue lifetime of single crystal silicon (SCS) was characterized in an environment free of oxygen, humidity, and organics. Long-term (> 1010 Hz) fatigue experiments performed with smooth-walled SCS devices showed no signs of fatigue damage up to 7.5 GPa. In contrast, experiments using SCS devices with a silicon dioxide (SiO2) coating and rough sidewalls due to scalloping from deep reactive ion etching exhibited fatigue drift at 2.7 GPa and suffered from short-term (<; 1010 Hz) fatigue… CONTINUE READING
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