Fast-switching insulated gate transistors

  title={Fast-switching insulated gate transistors},
  author={B. Jayant Baliga},
  journal={IEEE Electron Device Letters},
  • B. J. Baliga
  • Published 1 December 1983
  • Physics, Engineering
  • IEEE Electron Device Letters
Insulated gate transistors (IGT's) with high-speed gate turn-off capability have been developed by using electron irradiation to reduce the minority-carrier lifetime in the drift region. Gate turnoff times as low as 200 ns have been achieved. These devices have been found to offer a unique advantage in the ability to tradeoff conduction and switching losses which allows optimization of device characteristics for each application. 

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