Fast-switching insulated gate transistors

@article{Baliga1983FastswitchingIG,
  title={Fast-switching insulated gate transistors},
  author={B. Jayant Baliga},
  journal={IEEE Electron Device Letters},
  year={1983},
  volume={4},
  pages={452-454}
}
  • B. J. Baliga
  • Published 1 December 1983
  • Physics, Engineering
  • IEEE Electron Device Letters
Insulated gate transistors (IGT's) with high-speed gate turn-off capability have been developed by using electron irradiation to reduce the minority-carrier lifetime in the drift region. Gate turnoff times as low as 200 ns have been achieved. These devices have been found to offer a unique advantage in the ability to tradeoff conduction and switching losses which allows optimization of device characteristics for each application. 

Figures from this paper

Analysis of insulated gate transistor turn-off characteristics
  • B. J. Baliga
  • Engineering, Physics
    IEEE Electron Device Letters
  • 1985
A model based upon a MOSFET driving a wide-base p-n-p transistor is presented for analysis of the turn-off behavior of n-channel insulated gate transistors. This model is found to provide a very good
High-speed insulated-gate bipolar transistors fabricated using silicon wafer bonding
A high-speed IGBT fabricated using silicon direct wafer bonding is demonstrated. By controlling the heavily-doped n/sup +/ buffer layer in the device, an on-state voltage drop of 1.4 V at current
Shorter Turn-Off Times in Insulated Gate Transistors By Proton Implantation
Proton implantation has been used to shorten the turn-off time of insulated gate transistors. A narrow region of low carrier lifetime was created at 100-pm depth by implanting 3.1-MeV protons. As
Shorter turn-off times in insulated gate transistors by proton implantation
Proton implantation has been used to shorten the turnoff time of insulated gate transistors. A narrow region of low carrier lifetime was created at 100-µm depth by implanting 3.1-MeV protons. As with
Comparison of 300-, 600-, and 1200-V n-channel insulated gate transistors
The performance of insulated gate transistors with 300-, 600-, and 1200-V ratings were experimentally investigated. A comparison of several device characteristics, such as forward conduction, forward
The dual gate power device exhibiting the IGBT and the thyristor action
This new power device is fabricated and demonstrated for the first time. The device can behave as an insulated gate field-effect transistor (IGBT) or a thyristor by adding a second control gate. The
Modeling the turn-off characteristics of the bipolar-MOS transistor
TLDR
It is demonstrated that the turnoff waveform can be explained by a model based on a simple equivalent circuit and the transistor open-base turn-off process to explore the impact of some process modifications on speed improvement and to study the tradeoff between speed and on-resistance.
Temperature effects on high power low on-resistance MOS-bipolar transistor module
The problem of the temperature dependence of power transistors, under static conditions and switching times, has been addressed. The usual simplified differential equation has been extended to
Evolution of MOS-bipolar power semiconductor technology
A review of the innovations that have led to the evolution of a power transistor technology based on MOS gate control is provided. This technology offers the advantage of very high input impedance,
Comparison of neutron and electron irradiation for controlling IGT switching speed
Neutron irradiation (NI) and electron irradiation (EI) techniques are used to control carrier lifetime in insulated-gate transistors (IGT's). The two techniques are compared on the basis of switching
...
1
2
3
4
5
...

References

SHOWING 1-8 OF 8 REFERENCES
The insulated gate rectifier (IGR): A new power switching device
A new power semiconductor device called the Insulated Gate Rectifier (IGR) is described in this paper. This device has the advantages of operating at high current densities while requiring low gate
Lifetime control in silicon power devices by electron or gamma irradiation
High-frequency operation of silicon power rectifiers and thyristors is made possible by the controlled reduction of minority carrier lifetime in these devices. The irradiation of silicon power
IVA-8 power MOSFET integral diode reverse recovery tailoring using electron irradiation
  • B. J. Baliga
  • Physics
    IEEE Transactions on Electron Devices
  • 1982
We have previously reported on IrSi photodiodes with a spectral response cut-off wavelength of 5.75 micrometers. This translates to a barrier height of 215 meV measured optically on a special test
Electron irradiation of field-controlled thyristors
  • B. J. Baliga
  • Engineering
    IEEE Transactions on Electron Devices
  • 1982
The influence of 3-MeV electron irradiation upon the characteristics of asymmetrical field-controlled thyristors has been examined for fluences of up to 16 Mrad. In addition to the lifetime reduction
Comparison of gold, platinum, and electron irradiation for controlling lifetime in power rectifiers
Recombination statistics based upon a single dominant level have been used to predict the relative characteristics of gold-diffused, platinum-diffused, and electron-irradiated silicon power
Effect of carrier lifetime on the forward characteristics of high-power devices
The influence of carrier lifetime on the characteristics of high-power devices has been examined from the standpoint of forward voltage drop at a given current, using existing theories of the
The COMFETA new high conductance MOSgated device
  • IEEE Electron Device Lett .
  • 1983
Tailoring the recovered charge in power diodes using 2 MeV electron irradiation,
  • in Proc. Electrochem. Soc. Mtg., Paper 261RNP,
  • 1975