Fast flexible electronics using transferrable silicon nanomembranes

@article{Zhang2012FastFE,
  title={Fast flexible electronics using transferrable silicon nanomembranes},
  author={Kan Zhang and Jung‐Hun Seo and Weidong Zhou and Zhenqiang Jack Ma},
  journal={Journal of Physics D},
  year={2012},
  volume={45},
  pages={143001}
}
A systematic review, covering the aspects of material preparation, device fabrication and process integration, is provided for flexible electronics operating in high-frequency domain based on transferrable monocrystalline silicon (Si) nanomembranes (NM). Previously demonstrated methods of releasing Si NM from silicon-on-insulator source substrates and transferring it to flexible substrates are briefly described. Due to the processing temperature limitation of most flexible substrates, a pre… 
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References

SHOWING 1-10 OF 55 REFERENCES
12-GHz thin-film transistors on transferrable silicon nanomembranes for high-performance flexible electronics.
TLDR
By realizing 1 μm channel alignment for theSiNMs on a soft plastic substrate, thin-film transistors with a record speed of 12 GHz maximum oscillation frequency are demonstrated and indicate the great potential of properly processed SiNMs for high-performance flexible electronics.
Fabrication of Releasable Single‐Crystal Silicon–Metal Oxide Field‐Effect Devices and Their Deterministic Assembly on Foreign Substrates
A new class of thin, releasable single‐crystal silicon semiconductor device is presented that enables integration of high‐performance electronics on nearly any type of substrate. Fully formed metal
Microwave thin-film transistors using Si nanomembranes on flexible polymer substrate
Large-feature-size single-crystal Si thin-film transistors (TFTs) with fT of 1.9GHz and fmax of 3.1GHz were demonstrated on flexible polymer substrate. In this letter, the authors detail the
Flexible Electronics: Materials and Applications
Flexible-electronics is rapidly finding many main-stream applications where low-cost, ruggedness, light weight, unconventional form factors and ease of manufacturability are just some of the
Spin on dopants for high-performance single-crystal silicon transistors on flexible plastic substrates
Free-standing micro/nanoelements of single-crystal silicon with integrated doped regions for contacts provide a type of material that can be printed onto low-temperature device substrates, such as
Design and fabrication of high-performance polycrystalline silicon thin-film transistor circuits on flexible steel foils
This paper discusses in detail the design and fabrication process for the realization of high-performance polycrystalline silicon thin-film transistors and digital CMOS circuitry on thin flexible
Fabrication Process for Josephson Integrated Circuits
TLDR
By utilizing this process, experimental logic and memory circuits containing ≅100 interferometers with lines as small as 2.5 µm in width have been successfully fabricated.
Flexible photodetectors on plastic substrates by use of printing transferred single-crystal germanium membranes
This letter presents studies of multiwavelength flexible photodetectors on a plastic substrate by use of printing transferred single-crystal germanium (Ge) membranes. Ge membranes of 250nm thickness
High-speed strained-single-crystal-silicon thin-film transistors on flexible polymers
We fabricate thin-film transistors (TFTs) on both strained and unstrained single-crystal Si membranes transferred to flexible-polymer substrates. The active layer is transferred from the starting
...
1
2
3
4
5
...