Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate.

@article{Volk2019FastCS,
  title={Fast charge sensing of Si/SiGe quantum dots via a high-frequency accumulation gate.},
  author={Christian Volk and Anasua Chatterjee and Fabio Ansaloni and Charles M Marcus and Ferdinand Kuemmeth},
  journal={Nano letters},
  year={2019}
}
  • Christian Volk, Anasua Chatterjee, +2 authors Ferdinand Kuemmeth
  • Published in Nano letters 2019
  • Physics, Materials Science, Medicine
  • Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double- and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface… CONTINUE READING

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