Fast and Slow-state Traps at the Mosfet Oxide Interface with a Temperature Dependent Cv Method

@inproceedings{Rosaye2004FastAS,
  title={Fast and Slow-state Traps at the Mosfet Oxide Interface with a Temperature Dependent Cv Method},
  author={Jean-Yves Rosaye and P. Mialhe and Jean-Pierre Charles and Yukihiko Watanabe and Yukio Yasuda},
  year={2004}
}
The present experiments are intended to characterize defects in very thin MOS oxide at its Si/SiO2 interface using temperature-dependent electrical C (V) measurements. This method is shown to be useful in analyzing the correlation between slow and fast state traps. It has an original insight for high temperature-activated processes and also the advantage of cryogenic temperatures to investigate defect properties. In this work, fast-state and slow-state trap cross-sections are calculated and… CONTINUE READING