• Corpus ID: 250244009

Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure

@inproceedings{Tamura2022FastAS,
  title={Fast and Sensitive Terahertz Detection in a Current-Driven Epitaxial-Graphene Asymmetric Dual-Grating-Gate FET Structure},
  author={K. Tamura and Chao Tang and Daichi Ogiura and Kento Suwa and Hirokazu Fukidome and Yuma Takida and Hiroaki Minamide and Tetsuya Suemitsu and Taiichi Otsuji and Akira Satou},
  year={2022}
}
: We designed and fabricated an epitaxial-graphene-channel field-effect transistor (EG-FET) featured by the asymmetric dual-grating-gate (ADGG) structure working for a current-driven terahertz detector, and experimentally demonstrated a 10-ps order fast response time and a high responsivity of 0.3 mA/W to the 0.95-THz radiation incidence at room temperatures. The ADGG- and the drain-source-bias dependencies of the measured photoresponse showed a clear transition between plasmonic detection… 

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