Fast Response ZnO / porous Silicon UV Photoconductive Detector

  title={Fast Response ZnO / porous Silicon UV Photoconductive Detector},
  author={A. M. Suhail and A. N. Naji and G. S. Muhammed and H. A. Thjeel and Q. G. Al-zaidi},
  • A. M. Suhail, A. N. Naji, +2 authors Q. G. Al-zaidi
  • Published 2012
Zinc Oxide (ZnO) UV detector thin films have been prepared on nanospikes silicon layer with different etching time by spray pyrolysis using 0.1 M aqueous solution of Zinc acetate. The Hall measurements for ZnO films grown on the porous silicon layer, show that they were oriented in the c – axis and it is found to be a p – type semiconductor. This behavior may attribute to the compensation of the excess charge carriers in the ZnO film by the nanospikes silicon layer. The ZnO layer type… CONTINUE READING
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