Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K

@article{Das2017FastR,
  title={Fast Response (7.6s) Acetone Sensing by InGaN/GaN on Si (111) at 373 K},
  author={Subhashis Das and Ankush Bag and R. Ravindra Kumar and Dhrubes Biswas},
  journal={IEEE Electron Device Letters},
  year={2017},
  volume={38},
  pages={383-386}
}
A new and exciting resistive gas sensor based on Ni/InGaN/GaN heterostructure, grown by plasma-assisted molecular beam epitaxy, has been developed to efficiently detect acetone very rapidly at low temperature. Non-rectifying I–V characteristics of epitaxially relaxed InGaN with Ni contact have been revealed at 373 K. An incremental current of <inline… CONTINUE READING