Fast Parallel Programming Of Multi-level NAND Flash Memory Cells Using The Booster-line Technology

Abstract

Introduction With this programming method, a program speed of 300 ,us, which is equivalent to that of the single bit NAND cell, is The Multi-Level Cell (MLC) technology is essential in achieved. The parallel programming with booster-lines significantly reducing the bit cost of flash memories [I]. results in a significant improvement over the conventional… (More)

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