Far-Infrared Characteristics of Bulk and Nanostructured Wide-Bandgap Semiconductors

@inproceedings{Han2007FarInfraredCO,
  title={Far-Infrared Characteristics of Bulk and Nanostructured Wide-Bandgap Semiconductors},
  author={Jiaguang Han and Abul Kalam Azad and Weili Zhang},
  year={2007}
}
A review of far-infrared properties of popular bulk and nanostructured wide-bandgap semiconductors in the broadband terahertz region is presented. Such wide-bandgap semiconductor materials have shown promising applications in terahertz optoelectronics. The optical, dielectric or electric properties of bulk crystalline GaN, ZnO, and ZnS, and nanostructured ZnO and ZnS were characterized by terahertz time-domain spectroscopy measurements. Theoretical fitting based on dielectric models and… CONTINUE READING