Far-Infrared Active Media Based on Shallow Impurity State Transitions in Silicon

Abstract

Two mechanisms of the inverse population of shallow impurity states in silicon under optical pumping have been proposed and analyzed, using a procedure allowing to reduce the number of required matrix elements of transitions. The first mechanism is based on the resonance interaction of the 2p0 state in Si :Bi with optical phonons. The other one is based on… (More)

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