Failure mechanisms in CMOS-based RF switches subjected to RF stress

Abstract

We investigate the reliability of RF switches for high-power, high dynamic range RF applications. Switches in two different CMOS technology platforms (180 nm and 130 nm) were observed to fail catastrophically beyond 33 dBm RF input power. The switches were single-pole double-throw with series-shunt topology. The reliability of a standalone switching series… (More)

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Cite this paper

@article{Madan2009FailureMI, title={Failure mechanisms in CMOS-based RF switches subjected to RF stress}, author={Anuj Madan and Tushar K. Thrivikraman and John D. Cressler}, journal={2009 IEEE International Reliability Physics Symposium}, year={2009}, pages={741-744} }