Failure analysis of ESD-stressed SiC MESFET

@article{Phulpin2015FailureAO,
  title={Failure analysis of ESD-stressed SiC MESFET},
  author={Tanguy Phulpin and David Tr{\'e}mouilles and Karine Isoird and Dominique Tournier and Philippe Godignon and Patrick Austin},
  journal={Microelectronics Reliability},
  year={2015},
  volume={55},
  pages={1542-1548}
}
a CNRS, LAAS, 7 Avenue du Colonel Roche, F-31400 Toulouse, France b Univ de Toulouse, UPS, LAAS, F-31400 Toulouse, France c Université de Lyon, CNRS, Laboratoire AMPERE, UMR 5005, INSA de Lyon, F-69621 Villeurbanne, France d Institut de Microelectrónica de Barcelona-Centre Nacional de Microelectrónica (IMB-CNM), Consejo Superior de Investigaciones Científicas (CSIC), Universitat Autònoma de Barcelona, 08193 Barcelona, Spain 
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