Failure Precursors for Insulated Gate Bipolar Transistors ( IGBTs )

@inproceedings{Patil2008FailurePF,
  title={Failure Precursors for Insulated Gate Bipolar Transistors ( IGBTs )},
  author={Nishad Patil and Diganta Das and Kai Goebel and Michael Pecht},
  year={2008}
}
Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and collector-emitter ON voltage, are evaluated for insulated gate bipolar transistors (IGBTs). Based on the failure causes determined by the failure… CONTINUE READING
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