Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy

@inproceedings{Zhao2016FailureAI,
  title={Failure Analysis in Magnetic Tunnel Junction Nanopillar with Interfacial Perpendicular Magnetic Anisotropy},
  author={Weisheng Zhao and Xiaoxuan Zhao and Boyu Zhang and Kaihua Cao and Lezhi Wang and Wang Lin Kang and Qian D Shi and Mengxing Wang and Yu Zhang and You Wang and Shouzhong Peng and Jacques-Olivier Klein and Lirida Alves de Barros Naviner and Dafine Ravelosona},
  booktitle={Materials},
  year={2016}
}
Magnetic tunnel junction nanopillar with interfacial perpendicular magnetic anisotropy (PMA-MTJ) becomes a promising candidate to build up spin transfer torque magnetic random access memory (STT-MRAM) for the next generation of non-volatile memory as it features low spin transfer switching current, fast speed, high scalability, and easy integration into conventional complementary metal oxide semiconductor (CMOS) circuits. However, this device suffers from a number of failure issues, such as… CONTINUE READING

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