Faceting control by the stoichiometry influence on the surface free energy of low-index bcc-In2O3 surfaces.

Abstract

The faceting of In2O3(0 0 1), (0 1 1), and (1 1 1) grown by plasma-assisted molecular beam epitaxy on yttria-stabilised zirconia was investigated under different growth conditions-conventionally used oxygen-rich growth conditions with and without heavy Sn-doping, and indium-rich growth conditions-by in situ reflection high-energy electron diffraction… (More)
DOI: 10.1088/0953-8984/28/22/224006

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