Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide

@article{Chuang2015FabricationOT,
  title={Fabrication of through-silicon-via (TSV) by copper electroplated in an electrolyte mixed with supercritical carbon dioxide},
  author={H. C. Chuang and Jorge F. Fern{\'a}ndez Sanchez and A. H. Liao and C. C. Shen and C. C. Huang},
  journal={2015 Transducers - 2015 18th International Conference on Solid-State Sensors, Actuators and Microsystems (TRANSDUCERS)},
  year={2015},
  pages={464-467}
}
In this study we have performed complete filling of through-silicon vias (TSVs) by supercritical carbon dioxide (sc-CO2)-enabled Cu electroplating process for applications in 3D ICs. The sc-CO2 technique makes use of the special features of supercritical fluids, which combine benefits of different states of matter. The effects of different supercritical pressure and current density parameters were investigated, discussed, and the results were compared to traditional electroplating method… CONTINUE READING