Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology

@article{Hayashi1990FabricationOT,
  title={Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology},
  author={Y. Hayashi and S. Wada and K. Kajiyana and K. Oyama and R. Koh and S. Takahashi and T. Kunio},
  journal={Digest of Technical Papers.1990 Symposium on VLSI Technology},
  year={1990},
  pages={95-96}
}
  • Y. Hayashi, S. Wada, +4 authors T. Kunio
  • Published 1990
  • Engineering
  • Digest of Technical Papers.1990 Symposium on VLSI Technology
  • A technology is proposed for the fabrication of three-dimensional integrated circuits (3D-ICs) having a large number of device layers, referred to as `cumulatively bonded IC' (CUBIC) technology wherein several thin-film devices are bonded cumulatively. The technology was used to fabricate a two-active-layer device having a bulk-Si NMOSFET lower layer and a thinned NMOSFET upper layer. The CUBIC technology, essentially a face-to-back device bonding technology, is applicable to fabricating 3D-ICs… CONTINUE READING
    22 Citations

    Figures from this paper

    Creating 3D circuits using transferred films
    • 15
    A back-to-face silicon layer stacking for three-dimensional integration
    • 7
    Characteristics of thin-film devices for a stack-type MCM
    • 7
    Overlay as the key to drive wafer scale 3D integration
    • 20
    • PDF
    New Excimer Laser Annealing Process for Single-Crystal 3-D Stacked Thin-Film Transistors
    Benefits of vertically stacked integrated circuits for sequential logic
    • M. Reber, R. Tielert
    • Engineering, Computer Science
    • 1996 IEEE International Symposium on Circuits and Systems. Circuits and Systems Connecting the World. ISCAS 96
    • 1996
    • 10