Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology
@article{Hayashi1990FabricationOT, title={Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology}, author={Y. Hayashi and S. Wada and K. Kajiyana and K. Oyama and R. Koh and S. Takahashi and T. Kunio}, journal={Digest of Technical Papers.1990 Symposium on VLSI Technology}, year={1990}, pages={95-96} }
A technology is proposed for the fabrication of three-dimensional integrated circuits (3D-ICs) having a large number of device layers, referred to as `cumulatively bonded IC' (CUBIC) technology wherein several thin-film devices are bonded cumulatively. The technology was used to fabricate a two-active-layer device having a bulk-Si NMOSFET lower layer and a thinned NMOSFET upper layer. The CUBIC technology, essentially a face-to-back device bonding technology, is applicable to fabricating 3D-ICs… CONTINUE READING
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