Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology

@article{Hayashi1990FabricationOT,
  title={Fabrication of three-dimensional IC using `cumulatively bonded IC' (CUBIC) technology},
  author={Yoshihiro Hayashi and S. Wada and Kiyonori Kajiyana and Ken Oyama and R. Koh and S. Takahashi and Takemitsu Kunio},
  journal={Digest of Technical Papers.1990 Symposium on VLSI Technology},
  year={1990},
  pages={95-96}
}
  • Y. Hayashi, S. Wada, T. Kunio
  • Published 4 June 1990
  • Engineering
  • Digest of Technical Papers.1990 Symposium on VLSI Technology
A technology is proposed for the fabrication of three-dimensional integrated circuits (3D-ICs) having a large number of device layers, referred to as `cumulatively bonded IC' (CUBIC) technology wherein several thin-film devices are bonded cumulatively. The technology was used to fabricate a two-active-layer device having a bulk-Si NMOSFET lower layer and a thinned NMOSFET upper layer. The CUBIC technology, essentially a face-to-back device bonding technology, is applicable to fabricating 3D-ICs… 

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