Fabrication of thick silicon nitride blocks for integration of RF devices

@inproceedings{Fernndez2001FabricationOT,
  title={Fabrication of thick silicon nitride blocks for integration of RF devices},
  author={L. J. Fern{\'a}ndez and Erwin J. W. Berenschot and Javier Ses{\'e} and Remco J. Wiegerink and Jaap Flokstra and Henri V. Jansen and Mlko Elwenspoek},
  year={2001}
}
Introduction: The enormous growth of wireless and portable applications has led to strong demands for high-performance monolithic low-cost passive components in RF and microwave integrated circuits (ICs). However, some traditional microwave passive components such as transmission lines and filters are difficult to integrate on the same chip with the RF and microwave circuits owing to the high substrate losses associated with standard low-resistivity CMOS-grade silicon substrates. As a result… CONTINUE READING

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