Fabrication of the Isolated Nano-beams in the Normal (111) Si Wafers with KOH Etching

@article{Yang2006FabricationOT,
  title={Fabrication of the Isolated Nano-beams in the Normal (111) Si Wafers with KOH Etching},
  author={Heng Yang and Yongliang Yang and Tie Li and Jiwei Jiao and Xinxin Li and Yuelin Wang},
  journal={2006 1st IEEE International Conference on Nano/Micro Engineered and Molecular Systems},
  year={2006},
  pages={1052-1054}
}
Described in this paper is a novel method to fabricate the isolated nano-beams in the normal (111) Si wafers. The cantilever and the double clamped beams with nano thickness are anchored through the metal wires, which are isolated to the substrate electrically. The thickness of the beams is determined by dry etching. The beams are released by KOH etching… CONTINUE READING