Fabrication of silicon and germanium nanostructures by combination of hydrogen plasma dry etching and VLS growth mechanism


Semiconductor nanowires and nanotips recently attract a great deal of interest because of their potential for electronic and photonic applications. A novel process demonstrated here has been developed to fabricate the aligned Si nanowire and Ge nanostmcture with high aspect ratios. Au nanoparticle, seized by self-assemble monolayer, was adopted as hard mask… (More)


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