Fabrication of self-aligned P+ silicon gate field emission arrays on glass substrate for RF operation


A novel process is developed which can fabricate self-aligned FEAs on glass substrate with a low capacitance and an improved transconductance while the electron emitting material can be selected versatilely. The emission current and the gate capacitance obtained here are in the acceptable range suggested in the literature for RF amplification. 

4 Figures and Tables


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