Fabrication of lateral polysilicon gap of less than 50 nm using conventional lithography

@inproceedings{Dhahi2011FabricationOL,
  title={Fabrication of lateral polysilicon gap of less than 50 nm using conventional lithography},
  author={Th. S. Dhahi and Uda Hashim and Md. Eaqub Ali and Naser M. Ahmed and T. Nazwa},
  year={2011}
}
We report a thermal oxidation process for the fabrication of nanogaps of less than 50 nmin dimension. Nanogaps of this dimension are necessary to eliminate contributions from double-layer capacitance in the dielectric detection of protein or nucleic acid. The method combines conventional photolithography and pattern-size reduction techniques. The gaps are fabricated on polysilicon-coated silicon substrate with gold electrodes. The dimensions of the structure are determined by scanning electron… CONTINUE READING

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