Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si

@article{Nayfeh2005FabricationOH,
  title={Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si},
  author={A M Nayfeh and Chi On Chui and Takao Yonehara and K. C. Saraswat},
  journal={IEEE Electron Device Letters},
  year={2005},
  volume={26},
  pages={311-313}
}
We have successfully demonstrated high-performance p-MOSFETs in germanium grown directly on Si using a novel heteroepitaxial growth technique, which uses multisteps of hydrogen annealing and growth to confine misfit dislocations near the Ge-Si interface, thus not threading to the surface as expected in this 4.2% lattice-mismatched system. We used a low thermal budget process with silicon dioxide on germanium oxynitride (GeO/sub x/N/sub y/) gate dielectric and Si/sub 0.75/Ge/sub 0.25/ gate… CONTINUE READING
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