Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers

@article{Park2003FabricationOB,
  title={Fabrication of body-tied FinFETs (Omega MOSFETs) using bulk Si wafers},
  author={Tai-su Park and Siyoung Q Choi and D. H. Lee and J. R. Yoo and B. C. Lee and J Y Kim and C. G. Lee and K. K. Chi and S. H. Hong and S. J. Hynn and Y. G. Shin and J. Han and I. S. Park and U. I. Chung and J. T. Moon and E. Yoon and J H Lee},
  journal={2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407)},
  year={2003},
  pages={135-136}
}
Nano scale body-tied FinFETs have been firstly fabricated. They have fin top width of 30 nm, fin bottom width of 61 nm, fin height of 99 nm, and gate length of 60 nm. This Omega MOSFET shows excellent transistor characteristics, such as very low subthreshold swing, Drain Induced Barrier Lowering (DIBL) of 24 mV/V, almost no body bias effect, and orders of magnitude lower I/sub SUB//I/sub D/ than planar type DRAM cell transistors. 
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