Fabrication of a Si Photodiode for Position Sensitive Radiation Detection

Abstract

We have fabricated a position sensitive radiation detector by creating radiation damage regions in a Si photodiode. Radiation damage was created in layers at a depth of several mum by <sup>7</sup>Li and <sup>16</sup>O ion beams which had an energy between 2 and 4MeV. Ions were focused and scanned using a nuclear microprobe facility. The ion beam induced… (More)

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