Fabrication of a Few-Layer Graphene Electrodes for Molecular Electronics Devices

Abstract

We report on the fabrication of a molecular transistor based on a single molecule trapped in a few-layer graphene nanogap. The device is pre-patterned with He-ion beam milling or oxygen plasma etching prior to nanogap formation. Pre-patterning helps to localize the gap, and to make it narrower, so that only a few or a single molecule can be trapped in it… (More)

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@inproceedings{Holovchenko2014FabricationOA, title={Fabrication of a Few-Layer Graphene Electrodes for Molecular Electronics Devices}, author={Anastasia Holovchenko and M A C Koole and Enrique Burzur{\'i} and H.S.J. van der Zant}, year={2014} }