Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology

Abstract

A high aspect ratio and damage-free vertical ultrathin channel for a vertical-type double-gate MOSFET was fabricated by using low-energy neutral-beam etching (NBE). NBE can completely eliminate the charge build-up and photon-radiation damages caused by the plasma. The fabricated FinFETs realize a higher device performance (i.e., higher electron mobility… (More)

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Cite this paper

@article{Endo2006FabricationOF, title={Fabrication of FinFETs by Damage-Free Neutral-Beam Etching Technology}, author={Kazuhiko Endo and Shuichi Noda and Meishoku Masahara and Te. Kubota and Tsuneyuki Ozaki and Seiji Samukawa and Yongxun Liu and K. Ishii and Y. Ishikawa and E. Sugimata and Takashi Matsukawa and H. Takashima and Hiromi Yamauchi and Eiichi Suzuki}, journal={IEEE Transactions on Electron Devices}, year={2006}, volume={53}, pages={1826-1833} }