Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated $ \hbox{Al}_{2}\hbox{O}_{3}$ as Gate Dielectrics

@article{Chen2011FabricationOE,
  title={Fabrication of Enhancement-Mode AlGaN/GaN MISHEMTs by Using Fluorinated \$ \hbox\{Al\}_\{2\}\hbox\{O\}_\{3\}\$ as Gate Dielectrics},
  author={Chao Chi Chen and Xingzhao Liu and Benlang Tian and Ping Shu and Yuanfu Chen and Wanli Zhang and Hongchuan Jiang and Yanrong Li},
  journal={IEEE Electron Device Letters},
  year={2011},
  volume={32},
  pages={1373-1375}
}
High-performance enhancement-mode (E-mode) AlGaN/GaN metal-insulator-semiconductor HEMTs (MISHEMTs) were realized by using fluorinated Al2O3 thin films as gate dielectrics. The depth profile of Fluoride atoms determined by X-ray photoelectron spectroscopy showed that the fluorine (F) ions were incorporated into the surface (approximately 2 nm) of the Al2O3 gate dielectrics. With proper amount of F-ion incorporation, the threshold voltage of MISHEMTs shifted from - 4.8 to 0.11 V, converting… CONTINUE READING