Fabrication and properties of indium oxide/n‐GaAs junctions

@inproceedings{Golan1991FabricationAP,
  title={Fabrication and properties of indium oxide/n‐GaAs junctions},
  author={Arik Golan and J. L. Bregman and Yoram Shapira and Moshe Eizenberg},
  year={1991}
}
Indium oxide/n‐GaAs junctions have been prepared by deposition of indium oxide layers onto n‐type GaAs by means of reactive evaporation of In in the presence of oxygen. The electrical and structural properties and the chemical composition of the resulting junctions have been investigated as a function of the oxygen pressure and substrate temperature during deposition. The analytical tools employed were Auger electron spectroscopy, x‐ray diffraction, capacitance‐voltage measurements, and current… CONTINUE READING