Fabrication and integration of high performance mixed signal and RF passive components in 0.13/spl mu/m Cu BEOL technologies

Abstract

High-performance passive components are keys to reach system-on-a-chip (SOC) solution of mixed-signal and radio frequency (RF) circuit design. This paper presents the fabrication and integration of high performance mixed-signal and RF passive components using industrial standard 0.13/spl mu/m Cu BEOL technologies. On-chip inductor with 6/spl mu/m ultra-thick top metal is reported firstly. A 1.85-nH inductor achieved a peak quality factor (Q) of 27. Followed by high-performance/low-cost 1.5fF//spl mu/m/sup 2/ metal-insulator-metal (MTM) capacitors which increases capacitance density by 50% comparing to current industrial standard. Finally, high resistivity poly (HRP) resistors are shown. Deep n-well (DNW) is also part of the process in this study.

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Cite this paper

@article{Chen2004FabricationAI, title={Fabrication and integration of high performance mixed signal and RF passive components in 0.13/spl mu/m Cu BEOL technologies}, author={Z. Chen and K. M. Lin and C. C. Kuo and T. C. Ko and J. C. Huang and J. P. Wang and Y. F. Lin and T. W. Wu and T. C. Su and C. C. Liao and M. C. Jeng}, journal={Proceedings. 7th International Conference on Solid-State and Integrated Circuits Technology, 2004.}, year={2004}, volume={1}, pages={175-178 vol.1} }