Fabrication and electronic characterization of epitaxial Gd<inf>2</inf>O<inf>3</inf>-doped HfO<inf>2</inf> dielectrics on Si


The 5-nm-thick HfO<inf>2</inf> film doped with 35 mol% Gd<inf>2</inf>O<inf>3</inf> (GDH) as a high k dielectric has been epitaxially grown on Si (100) substrate by pulsed laser deposition (PLD). In situ reflection high-energy electron diffraction (RHEED) evolution of the (100)-oriented GDH during the deposition has been investigated and shows that a two… (More)